Physical properties of the ferroelectric capacitors based on Al-doped HfO2 grown via Atomic Layer Deposition on Si

Publication type: 
Journal
Authors: 
Vulpe, S; Nastase, F; Dragoman, M; Dinescu, A; Romanitan, C; Iftimie, S; Moldovan, A; Apostol, N
Year: 
2019
DOI: 
http://dx.doi.org/10.1016/j.apsusc.2019.03.166

Journal data

Journal: 
APPLIED SURFACE SCIENCE
Vol.: 
483
Pag.: 
324 333