Annealing of hydrogen-induced defects in RF-plasma-treated Si wafers: ex situ and in situ transmission electron microscopy studies

Publication type: 
Journal
Autori: 
Ghica, C; Nistor, LC; Vizireanu, S; Dinescu, G
Anul: 
2011
DOI: 
http://dx.doi.org/10.1088/0022-3727/44/29/295401

Journal data

Journal: 
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Vol.: 
44
Pag.: 
295401