Study on the effects of proton irradiation on the dc characteristics of AlGaN/GaN high electron mobility transistors with source field plate

Publication type:

Journal

Autori:

Liu, L; Hwang, YH; Xi, YY; Ren, F; Craciun, V; Pearton, SJ; Yang, G; Kim, HY; Kim, J

Anul:

2014

DOI:

http://dx.doi.org/10.1116/1.4866401

Journal data

Journal:

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Vol.:

Pag.:

22202