![fiipregatit](https://inflpr.ro/sites/all/themes/fast.png)
Progress in detector properties of heteroepitaxial diamond grown by chemical vapor deposition on Ir/YSZ/Si(001) wafers
- 2019 |
- Publications |
- Journals
Publication type:
Journal
Anul:
2019
DOI:
http://dx.doi.org/10.1016/j.diamond.2019.05.006 Journal data
Journal:
DIAMOND AND RELATED MATERIALS
Vol.:
97
Pag.:
UNSP 107420