Physical properties of the ferroelectric capacitors based on Al-doped HfO2 grown via Atomic Layer Deposition on Si

Publication type:

Journal

Autori:

Vulpe, S; Nastase, F; Dragoman, M; Dinescu, A; Romanitan, C; Iftimie, S; Moldovan, A; Apostol, N

Anul:

2019

DOI:

http://dx.doi.org/10.1016/j.apsusc.2019.03.166

Journal data

Journal:

APPLIED SURFACE SCIENCE

Vol.:

483

Pag.:

324 333