Fabrication, Characterization and Analysis of Concentrically Strained Silicon Nanowires With Extremely-High Hole Mobility

Publication type: 
Journal
Autori: 
Sharma, AK; Huang, D; Vaughan, E; Logofatu, PC; Rotter, TJ; Naudeau, ML
Anul: 
2020
DOI: 
http://dx.doi.org/10.1109/JQE.2020.3022380

Journal data

Journal: 
IEEE JOURNAL OF QUANTUM ELECTRONICS
Vol.: 
56
Issue: 
6
Pag.: 
7400115